ガリウムヒ素(GaAs)は、ガリウム（Ga）と砒素（As）の元素からなる化合物
GaAs Poly Crystal
| Standard Specifications | |
Method | HB | |
Purity | ≥6 | |
Type | N | |
Mobility(㎠/V・s) | 3500～5000 | |
Carrier concentration(cm-3) | 1.O x 10¹⁵～2.0x 10¹⁶ | |
Shape | “D” shaped | |
Size | 60 (W) x 45(H) | |
*上記以外の仕様は別途お問合せ下さい
GaAs Single Crystal Ingot
|
| Standard Specifications | |
Grwon Method | VGF | |
Conduct Type | N | |
Dopant | GaAs-Si | |
Diameter(mm) | 2-4inch | |
Orientation | 指定可能 | |
Ingot CC(/㎤) | (0.4-2.5) E18 | |
Resistivity(Ohm.cm) | (2-8) E-3 | |
Mobility(㎠/v.s) | >1500 | |
EPD(/㎠) | <3000 | |
*上記以外の仕様は別途お問合せ下さい
GaAs Wafer
|
| Standard Specifications | ||||
Diameter | 2inch | 3inch | 4inch | 6inch | |
Growth Method | VGF | ||||
Dopant | Undoped, N(Si dopant), P(Zn dopant) | ||||
Orientation | <100>±0.5° | ||||
OF location | EJ[0-1-1] ±0.5 | ||||
OF length(mm) | 16±1 | 22±1 | 32.5±1 | 47.5±1 | |
IF location | EJ[0-1 1] ±0.5 | ||||
IF length(mm) | 7±1 | 12±1 | 18±1 | 430±1 | |
Ingot CC(/㎤) | / | ||||
Resistivity(Ohm.cm) | ≥1E7 | ||||
Mobility(㎠/V.s) | ≥4500 | ||||
EPD(/㎠) | ≤3000 | ||||
Thickness(um) | 350±20, 625±20, (指定可能） | ||||
TTV/TIR(um) | Max : 10 | ||||
BOW(um) | Max : 10 | ||||
Warp(um) | Max : 10 | ||||
Surface Finish-front | Polished(Epi ready) | ||||
Surface Finish-back | Polished/ Etched | ||||
*上記以外の仕様は別途お問合せ下さい