ガリウムナイトライド (GaN)

HVPE法によるGaN結晶成長システム

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Horizontal type HVPE system

 Vertical type HVPE system


Polished GaNwafer

GaN/sapphire template

Free-standing
GaN wafer


Characteristics of GaN wafer


◇ Photoluminescence (@ R.T.)

◇ FWHM of XRD

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◇ AFM 

◇ Cathode-luminescence

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GaN Wafer


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Standard Specifications

Contents

Specifications

Orientation

(0001) ±0.5°

Diameter

50.3±0.5mm

Thickness

330±10um

Conduction Type

N-Type

Carrier Concentration

≥ 1    x 10¹⁷ /㎤

Orientation Flat

16±1.0mm,(1-100) ±0.5°

Bow

±20um

Macro Defect Density

<100

Etch Pit Density

≤8 x 10⁻⁶ /㎠

XRD FWHM

(0002) & (10-12) < 100arcsec

Ra : AFM (10 x 10 um)

< 0.5nm

*上記以外の仕様は別途お問合せ下さい


15x15 ㎟ C-Plane Substrate


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Standard Specifications

Appearance(Single side polished)

15 x 15 ㎟(±0.5㎜)

Thickness

330um(±10um)

Crystal orientation

(0001) ±0.5°

XRD’s FWHM(002),(102)

≤ 100arcsec

AFM’s Surface roughness(Ra)

≤ 0.8nm

n-Dopant concentration

≥ 1    x 10¹⁷ /㎤

Etch pit density

≤8 x 10⁻⁶ /㎠

Macro Defect Density

≤ 5/㎠

Bow

≤ ±20um

*上記以外の仕様は別途お問合せ下さい


GaN template

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Standard Specifications

Contents

Specifications

Sapphire Diameter

2inch

4inch

Orientation

(0001) ±0.2°

Sapphire Thickness

430±10um

650±10um

GaN Thickness

100±10um

100±10um

Conduction Type

N-Type

Carrier Concentration

≥ 1    x 10¹⁷ /㎤

OF Length

16±1.0mm

30±1.0mm

XRD FWHM

(0002) & (10-12) < 250arcsec

(0002) & (10-12) < 300arcsec

Surface Finish

As grown

Wafer Bow

<     600um

<     750um

*上記以外の仕様は別途お問合せ下さい

As-grown GaN wafer(Sapphire removed FS-GaN Wafer)


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Standard Specifications

Contents

Specifications

Diameter

2inch

4inch

Orientation

(0001) ±0.5°

GaN Thickness

Center : 370±10um, Side : : 350±10um

Conduction Type

N-Type

Carrier Concentration

≥ 1    x 10¹⁷ /㎤

XRD FWHM

(0002) & (10-12) < 100arcsec

Pit Density

≤    150EA/ 2inch

Orientation Flat

16±1.0mm,(1-100) ±0.5°

Wafer Bow

Convex 50um~Concave150um

Surface Finish

As-grown




 
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