Horizontal type HVPE system | Vertical type HVPE system |
Polished GaNwafer | GaN/sapphire template | Free-standing |
◇ Photoluminescence (@ R.T.) | ◇ FWHM of XRD |
◇ AFM | ◇ Cathode-luminescence |
Standard Specifications | |
Contents | Specifications |
Orientation | (0001) ±0.5° |
Diameter | 50.3±0.5mm |
Thickness | 330±10um |
Conduction Type | N-Type |
Carrier Concentration | ≥ 1 x 10¹⁷ /㎤ |
Orientation Flat | 16±1.0mm,(1-100) ±0.5° |
Bow | ±20um |
Macro Defect Density | <100 |
Etch Pit Density | ≤8 x 10⁻⁶ /㎠ |
XRD FWHM | (0002) & (10-12) < 100arcsec |
Ra : AFM (10 x 10 um) | < 0.5nm |
*上記以外の仕様は別途お問合せ下さい
Standard Specifications | |
Appearance(Single side polished) | 15 x 15 ㎟(±0.5㎜) |
Thickness | 330um(±10um) |
Crystal orientation | (0001) ±0.5° |
XRD’s FWHM(002),(102) | ≤ 100arcsec |
AFM’s Surface roughness(Ra) | ≤ 0.8nm |
n-Dopant concentration | ≥ 1 x 10¹⁷ /㎤ |
Etch pit density | ≤8 x 10⁻⁶ /㎠ |
Macro Defect Density | ≤ 5/㎠ |
Bow | ≤ ±20um |
*上記以外の仕様は別途お問合せ下さい
Standard Specifications | ||
Contents | Specifications | |
Sapphire Diameter | 2inch | 4inch |
Orientation | (0001) ±0.2° | |
Sapphire Thickness | 430±10um | 650±10um |
GaN Thickness | 100±10um | 100±10um |
Conduction Type | N-Type | |
Carrier Concentration | ≥ 1 x 10¹⁷ /㎤ | |
OF Length | 16±1.0mm | 30±1.0mm |
XRD FWHM | (0002) & (10-12) < 250arcsec | (0002) & (10-12) < 300arcsec |
Surface Finish | As grown | |
Wafer Bow | < 600um | < 750um |
*上記以外の仕様は別途お問合せ下さい
Standard Specifications | ||
Contents | Specifications | |
Diameter | 2inch | 4inch |
Orientation | (0001) ±0.5° | |
GaN Thickness | Center : 370±10um, Side : : 350±10um | |
Conduction Type | N-Type | |
Carrier Concentration | ≥ 1 x 10¹⁷ /㎤ | |
XRD FWHM | (0002) & (10-12) < 100arcsec | |
Pit Density | ≤ 150EA/ 2inch | |
Orientation Flat | 16±1.0mm,(1-100) ±0.5° | |
Wafer Bow | Convex 50um~Concave150um | |
Surface Finish | As-grown |